Tunneling field-effect transistor with a strained Si...

Solid-State Electronics 2012 Vol. 74; Iss. none

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Q.T. Zhao, W.J. Yu, B. Zhang, M. Schmidt, S. Richter, D. Buca, J.-M. Hartmann, R. Luptak, A. Fox, K.K. Bourdelle, S. Mantl
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Volume:
74
Year:
2012
Language:
english
DOI:
10.1016/j.sse.2012.04.018
File:
PDF, 806 KB
english, 2012
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