Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
M. Agrawal, N. Dharmarasu, K. Radhakrishnan, L. RavikiranVolume:
520
Year:
2012
Language:
english
DOI:
10.1016/j.tsf.2012.08.010
File:
PDF, 950 KB
english, 2012