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Effects of rapid thermal treatments on the electrical properties of thin SiO2 gate oxide for DRAM p-channel MOS transistors
S Santucci, S Guerrieri, M Passacantando, P Picozzi, F Famà, N Nardi, F BasileVolume:
280
Year:
2001
Language:
english
DOI:
10.1016/s0022-3093(00)00388-4
File:
PDF, 265 KB
english, 2001