Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon
J.P Kleider, P Roca i CabarrocasVolume:
299-302
Year:
2002
Language:
english
DOI:
10.1016/s0022-3093(01)01025-0
File:
PDF, 246 KB
english, 2002