Reverse bias annealing of Schottky diodes: evidence for the...

Reverse bias annealing of Schottky diodes: evidence for the lower defect density and better stability of polymorphous silicon compared to amorphous silicon

J.P Kleider, P Roca i Cabarrocas
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Volume:
299-302
Year:
2002
Language:
english
DOI:
10.1016/s0022-3093(01)01025-0
File:
PDF, 246 KB
english, 2002
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