Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain...

Journal of Non-Crystalline Solids 2002 Vol. 299-302; Iss. part-P2

Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency

F.G Della Corte, F Pezzimenti
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Volume:
299-302
Year:
2002
Language:
english
DOI:
10.1016/s0022-3093(01)01101-2
File:
PDF, 389 KB
english, 2002
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