On the electronic transport properties of amorphous (Si,Ge) alloys: charged scattering centers and compositional disorder
S.R. Sheng, M. Boshta, R. Braunstein, V.L. DalalVolume:
303
Year:
2002
Language:
english
DOI:
10.1016/s0022-3093(02)00932-8
File:
PDF, 188 KB
english, 2002