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Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress
T. Mohammed-Brahim, A. Rahal, G. Gautier, F. Raoult, H. Toutah, B. Tala-Ighil, J.F. LlibreVolume:
299-302
Year:
2002
Language:
english
DOI:
10.1016/s0022-3093(02)00933-x
File:
PDF, 131 KB
english, 2002