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Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs
Alain Bravaix, Didier Goguenheim, Nathalie Revil, Laurent Rubaldo, Emmanuel VincentVolume:
322
Year:
2003
Language:
english
DOI:
10.1016/s0022-3093(03)00194-7
File:
PDF, 275 KB
english, 2003