![](/img/cover-not-exists.png)
Low defect density amorphous silicon germanium alloy (1.5 eV) deposited at high growth rate under helium dilution in RF-PECVD method
Sukti Hazra, A.R. Middya, Swati RayVolume:
211
Year:
1997
Language:
english
DOI:
10.1016/s0022-3093(96)00631-x
File:
PDF, 549 KB
english, 1997