Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures
C. Chaneliere, J.L. Autran, S. Four, R.A.B. Devine, B. BallandVolume:
245
Year:
1999
Language:
english
DOI:
10.1016/s0022-3093(98)00873-4
File:
PDF, 219 KB
english, 1999