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Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si–SiO2 interface
Sokrates T Pantelides, Madhavan RamamoorthyVolume:
254
Year:
1999
Language:
english
DOI:
10.1016/s0022-3093(99)00444-5
File:
PDF, 250 KB
english, 1999