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Structural study of initial layer for μc-Si:H growth using real time in situ spectroscopic ellipsometry and infrared spectroscopy
H Fujiwara, Y Toyoshima, M Kondo, A MatsudaVolume:
266-269
Year:
2000
Language:
english
DOI:
10.1016/s0022-3093(99)00715-2
File:
PDF, 168 KB
english, 2000