Persistent excited conductivity and the threshold fluence...

Persistent excited conductivity and the threshold fluence in a-Si:H under 17 MeV proton irradiation

H Amekura, N Kishimoto, K Kono, A Kondo
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Volume:
266-269
Year:
2000
Language:
english
DOI:
10.1016/s0022-3093(99)00773-5
File:
PDF, 135 KB
english, 2000
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