![](/img/cover-not-exists.png)
Creation and annihilation mechanism of dangling bonds within the a-Si:H growth surface studied by in situ ESR technique
Satoshi Yamasaki, Ujjwal K. Das, Takahide Umeda, Junichi Isoya, Kazunobu TanakaVolume:
266-269
Year:
2000
Language:
english
DOI:
10.1016/s0022-3093(99)00843-1
File:
PDF, 117 KB
english, 2000