Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
K Mourgues, A Rahal, T Mohammed-Brahim, M Sarret, J.P Kleider, C Longeaud, A Bachrouri, A Romano-RodriguezVolume:
266-269
Year:
2000
Language:
english
DOI:
10.1016/s0022-3093(99)00937-0
File:
PDF, 329 KB
english, 2000