The nanometer-scale selective overgrowth of Ge over Si...

Surface Science 2002 Vol. 496; Iss. 1-2

The nanometer-scale selective overgrowth of Ge over Si islands on Si(0 0 1) windows in ultrathin SiO2 films

Yoshiki Nitta, Motoshi Shibata, Ken Fujita, Masakazu Ichikawa
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Volume:
496
Year:
2002
Language:
english
DOI:
10.1016/s0039-6028(01)01650-8
File:
PDF, 271 KB
english, 2002
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