Reflectance anisotropy oscillations of the heteroepitaxial...

Surface Science 1997 Vol. 375; Iss. 2-3

Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1 − xGaxAs on GaAs(001) surfaces by molecular beam epitaxy

A.G. Taylor, A.R. Turner, B.A. Joyce, M.E. Pemble
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Volume:
375
Year:
1997
Language:
english
DOI:
10.1016/s0039-6028(96)01294-0
File:
PDF, 528 KB
english, 1997
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