Nanometer-scale Si selective growth on Ga-adsorbed voids in...

Surface Science 1999 Vol. 431; Iss. 1-3

Nanometer-scale Si selective growth on Ga-adsorbed voids in ultrathin SiO2 films

Yoshiki Nitta, Motoshi Shibata, Ken Fujita, Masakazu Ichikawa
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Volume:
431
Year:
1999
Language:
english
DOI:
10.1016/s0039-6028(99)00511-7
File:
PDF, 498 KB
english, 1999
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