Reactive partially ionized beam deposition of AlN thin...

Materials Letters 1997 Vol. 33; Iss. 3-4

Reactive partially ionized beam deposition of AlN thin films

Jiayou Feng, Junqing Xie, Qingwei Mo
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Volume:
33
Year:
1997
Language:
english
DOI:
10.1016/s0167-577x(97)00088-8
File:
PDF, 325 KB
english, 1997
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