Defect formation in electron-irradiated synthetic diamond...

Materials Letters 1998 Vol. 34; Iss. 3-6

Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820–1120 K

E.M Shishonok, V.B Shipilo, G.P Popelnuk, I.I Azarko, A.A Melnikov, A.R Filipp
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Volume:
34
Year:
1998
Language:
english
DOI:
10.1016/s0167-577x(97)00149-3
File:
PDF, 101 KB
english, 1998
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