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Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon
J. Auleytner, L. Datsenko, V. Klad’ko, V. Machulin, V. Melnyk, I. Prokopenko, J. Bak-Misiuk, A. MisiukVolume:
286
Year:
1999
Language:
english
DOI:
10.1016/s0925-8388(98)01014-7
File:
PDF, 88 KB
english, 1999