Strain relaxation of AlxGa1−xN epitaxial layers on GaN and SiC substrates
J Domagala, M Leszczynski, P Prystawko, T Suski, R Langer, A Barski, M BremserVolume:
286
Year:
1999
Language:
english
DOI:
10.1016/s0925-8388(98)01022-6
File:
PDF, 171 KB
english, 1999