High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs...

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

Wei Zhou, Xiang Li, Sujing Xia, Jie Yang, Wu Tang, K.M. Lau
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Volume:
28
Year:
2012
Language:
english
DOI:
10.1016/s1005-0302(12)60033-4
File:
PDF, 558 KB
english, 2012
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