![](/img/cover-not-exists.png)
Model device parameters for a 10-Gb/s HEMT modulator driver IC
Gao Jianjun, Gao Baoxin, Pan Bo, Liang ChunguangVolume:
35
Year:
2002
Language:
english
Pages:
4
DOI:
10.1002/mop.10606
File:
PDF, 165 KB
english, 2002