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In situ microwave characterisation of medium-k hfo2 and high-k srtio3 dielectrics for metal-insulator-metal capacitors integrated in back-end of line of integrated circuits
Vo, T.T., Lacrevaz, T., Bermond, C., Bertaud, T., Flechet, B., Farcy, A., Morand, Y., Blonkowski, S., Torres, J., Guigues, B., Defay, E.Volume:
2
Year:
2008
Language:
english
DOI:
10.1049/iet-map:20070344
File:
PDF, 436 KB
english, 2008