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40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes
Shimada, N., Horiuchi, O., Gen-ei, K., Tanaka, A., Okada, M., Watanabe, M., Itoh, Y., Okuda, H., Fukuoka, K.Volume:
5
Year:
1999
Language:
english
DOI:
10.1109/2944.788443
File:
PDF, 167 KB
english, 1999