40-mW 100°C maximum temperature operation of 655-nm band...

40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

Shimada, N., Horiuchi, O., Gen-ei, K., Tanaka, A., Okada, M., Watanabe, M., Itoh, Y., Okuda, H., Fukuoka, K.

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Volume:

Year:

1999

Language:

english

DOI:

10.1109/2944.788443

File:

PDF, 167 KB

english, 1999

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