Growth and fabrication of high-performance 980-nm strained...

IEEE Journal of Quantum Electronics 1994 Vol. 30; Iss. 2

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

Chand, M., Chu, S.N.G., Dutta, N.K., Lopata, J., Geva, M., Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P.
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Volume:
30
Year:
1994
Language:
english
DOI:
10.1109/3.283790
File:
PDF, 1.93 MB
english, 1994
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