Impact ionization characteristics of III-V semiconductors...

IEEE Journal of Quantum Electronics 2000 Vol. 36; Iss. 2

Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses

Yuan, P., Hansing, C.C., Anselm, K.A., Lenox, C.V., Nie, H., Holmes, A.L., Jr., Streetman, B.G., Campbell, J.C.
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Volume:
36
Year:
2000
Language:
english
DOI:
10.1109/3.823466
File:
PDF, 157 KB
english, 2000
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