Lateral confinement InGaAsP superluminescent diode at 1.3...

Lateral confinement InGaAsP superluminescent diode at 1.3 µm

Kaminow, I., Eisenstein, G., Stulz, L., Dentai, A.
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Volume:
19
Year:
1983
Language:
english
DOI:
10.1109/jqe.1983.1071724
File:
PDF, 628 KB
english, 1983
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