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Modeling of the threshold operation of 1.3-μm GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers
Sarzala, R.P.Volume:
40
Year:
2004
Language:
english
DOI:
10.1109/jqe.2004.828228
File:
PDF, 599 KB
english, 2004