A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure
Yamaoka, K., Iwanari, S., Murakuki, Y., Hirano, H., Sakagami, M., Nakakuma, T., Miki, T., Gohou, Y.Volume:
40
Year:
2005
Language:
english
DOI:
10.1109/jssc.2004.837967
File:
PDF, 1.19 MB
english, 2005