A read-static-noise-margin-free SRAM cell for low-VDD and high-speed applications
Takeda, K., Hagihara, Y., Aimoto, Y., Nomura, M., Nakazawa, Y., Ishii, T., Kobatake, H.Volume:
41
Year:
2006
Language:
english
DOI:
10.1109/jssc.2005.859030
File:
PDF, 1.02 MB
english, 2006