A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read...

IEEE Journal of Solid-State Circuits 2008 Vol. 43; Iss. 1

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Kwang-Jin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Chang-Soo Lee, Hye-Jin Kim, Joon-Min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, You
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Volume:
43
Year:
2008
Language:
english
DOI:
10.1109/jssc.2007.908001
File:
PDF, 4.53 MB
english, 2008
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