A 130 mV SRAM With Expanded Write and Read Margins for...

IEEE Journal of Solid-State Circuits 2011 Vol. 46; Iss. 2

A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications

Meng-Fan Chang, Shi-Wei Chang, Po-Wei Chou, Wei-Cheng Wu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Year:
2011
Language:
english
DOI:
10.1109/jssc.2010.2091321
File:
PDF, 1.56 MB
english, 2011
Conversion to is in progress
Conversion to is failed