A Single-Temperature Trimming Technique for MOS-Input...

IEEE Journal of Solid-State Circuits 2011 Vol. 46; Iss. 9

A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 V/C Offset Drift

Bolatkale, M., Pertijs, M.A.P., Kindt, W.J., Huijsing, J.H., Makinwa, K.A.A.
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Volume:
46
Year:
2011
Language:
english
DOI:
10.1109/jssc.2011.2139530
File:
PDF, 2.24 MB
english, 2011
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