A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, Ultra Low...

IEEE Journal of Solid-State Circuits 2012 Vol. 47; Iss. 7

A 65 nm, 850 MHz, 256 kbit, 4.3 pJ/access, Ultra Low Leakage Power Memory Using Dynamic Cell Stability and a Dual Swing Data Link

Rooseleer, B., Cosemans, S., Dehaene, W.
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Volume:
47
Year:
2012
Language:
english
DOI:
10.1109/jssc.2012.2191316
File:
PDF, 1.83 MB
english, 2012
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