A Physics-Based Model for a SiC JFET Accounting for...

IEEE Transactions on Industry Applications 2011 Vol. 47; Iss. 1

A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility

Platania, E., Zhiyang Chen, Chimento, F., Grekov, A.E., Ruiyun Fu, Liqing Lu, Raciti, A., Hudgins, J.L., Mantooth, H.A., Sheridan, D.C., Casady, J., Santi, E.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
47
Year:
2011
Language:
english
DOI:
10.1109/tia.2010.2090843
File:
PDF, 1.26 MB
english, 2011
Conversion to is in progress
Conversion to is failed