Physical Mechanisms of Radiation Hardening of MOS Devices...

IEEE Transactions on Nuclear Science 1975 Vol. 22; Iss. 6

Physical Mechanisms of Radiation Hardening of MOS Devices by Ion Implantation

Curtis, O. L., Srour, J. R., Chiu, K. Y.
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Volume:
22
Year:
1975
Language:
english
DOI:
10.1109/tns.1975.4328100
File:
PDF, 1.24 MB
english, 1975
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