The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies
M. Passacantando, F. Jolly, L. Lozzi, V. Salerni, P. Picozzi, S. Santucci, C. Corsi, D. ZintuVolume:
322
Year:
2003
Language:
english
DOI:
10.1016/s0022-3093(03)00206-0
File:
PDF, 272 KB
english, 2003