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Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
Okamoto, D., Yano, H., Hirata, K., Hatayama, T., Fuyuki, T.Volume:
31
Year:
2010
Language:
english
DOI:
10.1109/led.2010.2047239
File:
PDF, 167 KB
english, 2010