The enhancement of luminescence in ion implanted Si quantum...

Nanotechnology 2000 / 12 Vol. 11; Iss. 4

The enhancement of luminescence in ion implanted Si quantum dots in SiO 2 matrix by means of dose alignment and doping

Tetelbaum, D I, Gorshkov, O N, Trushun, S A, Revin, D G, Gaponova, D M, Eckstein, W
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Volume:
11
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/11/4/320
Date:
December, 2000
File:
PDF, 79 KB
english, 2000
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