AlGaN/GaN Heterostructure Field-Effect Transistors on...

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

Higashiwaki, Masataka, Mimura, Takashi, Matsui, Toshiaki
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Volume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.1.021103
Date:
February, 2008
File:
PDF, 309 KB
english, 2008
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