Far‐infrared measurements of the mobility and carrier...

Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)

Morley, S., Zahn, D. R. T., Eickhoff, T., Richter, W., Woolf, D. A., Westwood, D. I., Williams, R. H.

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Volume:

Year:

1992

Language:

english

DOI:

10.1063/1.351845

File:

PDF, 1006 KB

english, 1992

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