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Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)
Morley, S., Zahn, D. R. T., Eickhoff, T., Richter, W., Woolf, D. A., Westwood, D. I., Williams, R. H.Volume:
72
Year:
1992
Language:
english
DOI:
10.1063/1.351845
File:
PDF, 1006 KB
english, 1992