Growth and fabrication of strained-layer InGaAs/GaAs...

Journal of Applied Physics 1997 Vol. 82; Iss. 9

Growth and fabrication of strained-layer InGaAs/GaAs quantum well lasers grown on GaAs(311)A substrates using only a silicon dopant

Takahashi, Mitsuo, Hirai, Manabu, Fujita, Kazuhisa, Egami, Norifumi, Iga, Kenichi
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Volume:
82
Year:
1997
Language:
english
DOI:
10.1063/1.366191
File:
PDF, 1.91 MB
english, 1997
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