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ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER
Sh. HUSSEIN, A., HASSAN, Z., HASSAN, H. ABU, THAHAB, S. M.Volume:
9
Language:
english
Journal:
International Journal of Nanoscience
DOI:
10.1142/s0219581x10006776
Date:
August, 2010
File:
PDF, 211 KB
english, 2010