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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs
Lauenstein, Jean-Marie, Goldsman, Neil, Liu, Sandra, Titus, Jeffrey L., Ladbury, Raymond L., Kim, Hak S., Phan, Anthony M., LaBel, Kenneth A., Zafrani, Max, Sherman, PhillipVolume:
58
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2011.2171995
Date:
December, 2011
File:
PDF, 806 KB
english, 2011