Strain and Temperature Dependence of Defect Formation at...

IEEE Transactions on Electron Devices 2012 / 10 Vol. 59; Iss. 10

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Lin, Chung-Han, Merz, Tyler A., Doutt, Daniel R., Joh, Jungwoo, del Alamo, Jesús A., Mishra, Umesh K., Brillson, Leonard J.
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2206595
Date:
October, 2012
File:
PDF, 1.43 MB
english, 2012
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