1.4-kV Breakdown Voltage for AlGaN/GaN...

IEEE Electron Device Letters 2012 / 10 Vol. 33; Iss. 10

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

Selvaraj, Susai Lawrence, Watanabe, Arata, Wakejima, Akio, Egawa, Takashi
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2207367
Date:
October, 2012
File:
PDF, 415 KB
english, 2012
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