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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A novel 0.79 μm/sup 2/ SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM
Soon-Moon Jung,, Hyungshin Kwon,, Jaehun Jeong,, Wonseok Cho,, Sungbong Kim,, Hoon Lim,, Kwangok Koh,, Youngseop Rah,, Jaekyun Park,, Heesoo Kang,, Gyuho Lyu,, Joonbum Park,, Chulsoon ChanYear:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175868
File:
PDF, 239 KB
english, 2002