Modeling of Radiation-Induced Leakage and Low Dose-Rate...

IEEE Transactions on Nuclear Science 2009 / 08 Vol. 56; Iss. 4

Modeling of Radiation-Induced Leakage and Low Dose-Rate Effects in Thick Edge Isolation of Modern MOSFETs

Zebrev, Gennady I., Gorbunov, Maxim S.
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Volume:
56
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2009.2016096
Date:
August, 2009
File:
PDF, 1.14 MB
english, 2009
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